1 mar. 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet dual bipolar operational amplifiers az4558c general description the az4558c consists of two high performance operational amplifiers. the ic features high gain, low equivalent input noise voltage, high input resistance, excellent channel separation, wide range of operating voltage and internal frequency compensation. it can work with 18v maximum power supply voltage or single power supply up to 36v. the az4558c is available in dip-8 and soic-8 pack- ages. features internally frequency compensated large signal voltage gain: 100db typical gain and phase match between amplifiers gain bandwidth product (at 10khz): 5.5mhz pin to pin compatible with mc1458 applications audio ac-3 decoder system audio amplifier figure 1. package types of az4558c soic-8 dip-8
2 mar. 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet dual bipolar operational amplifiers az4558c functional block diagram figure 3. functional block diagram of az4558c (each amplifier) figure 2. pin configuration of az4558c (top view) (soic-8) v cc output 2 input 2- input 2+ output 1 input 1- input 1+ v ee pin configuration m package - input + input v ee output v cc (dip-8) p package v cc output 2 input 2- input 2+ output 1 input 1- input 1+ v ee 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5
3 mar. 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet dual bipolar operational amplifiers az4558c ordering information package tempe rat ure range part number marking id packing type lead free green lead free green soic-8 -40 to 85 o c az4558cm-e1 az4558cm-g1 4558cm-e1 4558cm-g1 tube az4558cmtr-e1 az4558cmtr-g1 4558cm-e1 4558cm-g1 tape & reel dip-8 -40 to 85 o c az4558cp-e1 AZ4558CP-G1 az4558cp-e1 AZ4558CP-G1 tube circuit type package m: soic-8 e1: lead free g1: green az4558c - tr: tape and reel blank: tube p: dip-8 parameter symbol value unit supply voltage v cc +20 v v ee -20 input voltage v i 15 v differential input voltage v id 30 v operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering 10s) t l 260 o c power dissipation p d dip 800 mw soic 500 mw note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functi onal operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute maximum ratings" for extended periods may affect device reliability. absolute maximum ratings (note 1) recommended operating conditions parameter min max unit supply voltage 2 18 v operating temperature range -40 85 o c bcd semiconductor's pb-free products, as desi gnated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages.
4 mar. 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet dual bipolar operational amplifiers az4558c electrical characteristics operating conditions: v cc = + 15v, v ee =-15v, t a =25 o c, unless otherwise specified. parameter symbol condi tions min typ max unit input offset voltage v io 15mv input offset current i io v cm =0v 10 100 na input bias current i ib v cm =0v 70 400 na large signal voltage gain a vd r l = 2 k ?, v o = 10v 85 100 db supply voltage re jection ratio svr r s 10k ? 80 100 db supply current i cc all amplifiers, no load 2.5 4.5 ma input common mode voltage range v icm 12 v common mode rejection ratio cmrr r s 10k ? 70 95 db output voltage swing v o r l 10k ? 12 14 v r l 2k ? 10 13 slew rate sr v i = 10v, r l =2k ? , c l =100pf, unity gain 1.8 v/ s rise time t r v i = 20mv, r l =2k ? , c l =100pf, unity gain 0.3 s overshoot k ov v i = 20mv, r l =2k ? , c l =100pf, unity gain 15 % input resistance r i 0.5 m ? output resistance r o 45 ? unity gain bandwidth b gain=0db 2.8 mhz gain bandwidth product gbwp v i = 10mv, r l =2k ? , c l =100pf, f=10khz 5.5 mhz total harmonic distortion plus noise thd+n f=1khz, a v =6db, r l =10k ? , v o =1v rms , 0.002 % equivalent input noise voltage density e n r s =100 ? , f=1khz 10 output current i sink v-=1v, v+= 0v, v o =2v 60 ma i source v+=1v, v-= 0v, v o =2v 35 thermal resistance (junction to case) jc dip-8 55 o c/w soic-8 81 q 9 + ] ----------
5 mar. 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet dual bipolar operational amplifiers az4558c figure 4. open loop voltage gain vs. frequency figure 5. maximum output voltage swing vs. frequency typical performance characteristics figure 6. maximum ou tput voltage swing figure 7. supply current vs. temperature vs. load resistance -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 2.0 2.2 2.4 2.6 2.8 3.0 3.2 supply current (ma) temperature ( o c) 1 10 100 1k 10k 100k 1m 10m 0 20 40 60 80 100 120 open loop gain (db) frequency (hz) 1 10 100 1k 10k 100k 1m 5 10 15 20 v cc =+15v, v ee =-15v, r l =2k ? , thd+n<5% maximum swing voltage (v) frequency (hz) 100 1k 10k -16 -12 -8 -4 0 4 8 12 16 negative voltage swing output voltage swing (v) resistance load ( ? ) positive voltage swing
6 mar. 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet dual bipolar operational amplifiers az4558c typical performance ch aracteristics (continued) figure 8. input offset voltage vs. temperature figure 9. input bias current vs. temperature -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 0 20 40 60 80 100 120 input bias current (na) temperature ( o c) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 -2 -1 0 1 2 3 4 5 input offset voltage (mv) temperature ( o c)
7 mar. 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet dual bipolar operational amplifiers az4558c typical application figure 10. typical application of az4558c in audio 2nd order low pass filter (f o =50.6khz, q=0.7015, input impedance= 10k, gain=6db, group delay=4.48 s) v cc =+12v c3 0.1 f c6 0.1 f gnd gnd v out v in r1 20k 1% c4 22 f/25v gnd c5 1000pf c2 22 f/ 25v r3 3.3k 1% r2 10k 1% c1 150pf + 3 (5) - 2 (6) 8 4 out 1 (7) az4558c gnd gnd r4 6.8k v ee =-12v r5 10k
8 mar. 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet dual bipolar operational amplifiers az4558c mechanical dimensions dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ note: eject hole, oriented hole and mold mark is optional.
9 mar. 2010 rev. 1. 6 bcd semiconductor manufacturing limited data sheet dual bipolar operational amplifiers az4558c mechanical dimens ions (continued) soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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